Jeffrey Hopwood

Jeffrey Hopwood

(617) 627-4358
161 College Avenue
Research/Areas of Interest: microwave circuit design for microplasma generation, microplasma-based environmental sensors and other microsystem applications, plasma diagnostic methods, characterization, and modeling

Education

  • Ph.D., Michigan State University, United States, 1990
  • M.S., Michigan State University, United States, 1987
  • B.S., Michigan State University, United States, 1985

Biography

Jeffrey Hopwood earned a Ph.D. in electrical engineering from Michigan State University, where he studied electron cyclotron resonance plasmas. He joined IBM at the T.J. Watson Research Center in 1991 as a postdoctoral fellow in the Advanced Materials Laboratory. Following this experience, he joined Northeastern University in 1993. He became a member of the Tufts Department of Electrical and Computer Engineering Department in 2006. Hopwood has worked primarily in the fields of plasma processing and plasma source design.

Jeffrey Hopwood's current research interests include microplasma-based environmental sensors and novel plasma processes for the fabrication of nanoscale devices. Other research interests are plasma etching and deposition processes for integrated circuit fabrication, ionized physical vapor deposition (I-PVD), and plasma deposition of super-hard coatings.