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Cambridge Nanotech Savannah Atomic Layer Deposition (ALD) System
The Savannah system is a very popular atomic layer deposition
(ALD) platform. The substrate is heated in the vacuum chamber with a
constant flow of carrier nitrogen. Reactive precursors are
sequentially pulsed into the chamber for short periods of time (< 1
second) followed by a longer nitrogen purge (>5 seconds) which
removes unreacted precursor from the chamber before the next
precursor is pulsed in. This allows a single layer of material to be
deposited per cycle, resulting in very fine thickness control, high
uniformity across the substrate, and conformal depositions.
Depositions are slow (on the order of 1 angstrom per cycle), so only
thin films can be deposited.
Contacts: Robert White, James Vlahakis, Pooria Mustafulu, Kevin Ligonde
Related Standard Operating Procedures:
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