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SSI Rapid Thermal Processor

Through the use of high power heating lamps, the SSI RTP can heat samples (wafers, slides) up 1200°C on a time scale of several seconds. This can be useful for activating or driving dopants, growing oxide films, annealing interlayer contacts, etc. Great care must be exercised to prevent damage to the substrate or process chamber as a result of overheating.

This tool requires a formal checkout.

Related Standard Operating Procedures: