Molecular Beam Epitaxy (MBE)
The following equipment and capabilities are available. Please contact the TEC Facility staff for more information about specific equipment.
Veeco GEN Xplor dual-chamber system
Veeco GEN Xplor dual-chamber UHV MBE system
The Veeco GEN Xplor dual-chamber system is a III-V semiconductor focused UHV system consisting of two Veeco GEN Xplor research MBEs connected in vacuo. Chamber one (GM1) contains sources for growth of Arsenide and Antimonide based materials and devices, while chamber two (GM2) contains sources for Arsenide based material and device growth, with Phosphorus capability to be added mid-2019. While both MBEs are capable of growing materials for a wide range of applications, they have been designed with capabilities specifically to enable the growth of small bandgap materials. Samples may be transferred in vacuo between the two systems to allow for wide variety of heterostructures to be fabricated. n and p-type dopants are available on both systems. Both GM1 and GM2 chambers have RHEED systems and optical pyrometers available for in-situ growth monitoring. A kSA BandiT band-edge thermometry and black-body emission monitor is available for monitoring of growth down to low-temperatures. The GEN Xplor system is capable of accepting 3", 2", and partial wafers sizes.
GM1 Elemental Sources: Ga, In, Al, As, Sb, Bi, Si (dopant), Be (dopant), GaTe (dopant)
GM2 Elemental Sources: Ga, In, Al, Tl, As, P (available mid 2019), Si (dopant), Be (dopant)
VG90 UHV MBE system
VG90 UHV MBE system
The VG90 UHV MBE system is a dual chamber VG Semicon MBE system, with chamber one (GM1) currently available for growth of group IV semiconductor materials. Chamber two (GM2) is fully facilitized and available for future expansion into additional materials. System components and electronics have all been retrofit and brought up to date with modern digital and software controls by Riber S.A. In the GM1 chamber Si and Ge electron beam sources are available for high-rate growth of SiGe layers, while a Sn effusion cell is available for growth of SiGeSn photonic materials. Ga and a Sb/In (depending on need) solid source dopant cells are installed. The system contains a low energy ion dopant source for As and B doping that is currently being reworked and is expected to be available late 2019. The VG90 system can accept 6" and 4" wafers, and features a fast-entry lock (FEL) and UHV prep chamber for loading and storage of up to 10 wafers at one time. GM1 has an optical pyrometer for measurement of wafer temperature, EIES system for control and growth-rate monitoring of Si and Ge electron beam sources, and BFM for measurement of Sn fluxes.
GM1 Elemental Sources: Si, Ge, Sn, Ga (dopant), Sb or In (dopant, rotating), As (ion dopant source, expected late 2019), B (ion dopant source, expected late 2019)