News

October 2023

Congratulations to former graduate student Maddy Nordstrom for her paper "Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays," which was just published in Crystal Growth and Design. Her paper describes our efforts to integrate GaSb-based structures on highly mismatched GaAs(111)A substrates. By adapting the traditional interfacial misfit array technique developed for (001) surfaces to these (111) surfaces, we showed that we can produce high quality GaSb(111)A virtual buffers. This project was carried out in collaboration with researchers at Tufts, Stanford, and Idaho National Laboratory.

September 2023

The Quantum Nanomaterials Laboratory opens at Tufts University!