Research

Highly symmetric nanostructures for deterministic quantum light sources

We take advantage of the crystal symmetry of (111)-oriented surfaces to create self-assembled quantum dots whose electronic energy levels are ideally suited to serve as on-demand sources of single and entangled photons.

Topological phase transitions in trivial semiconductors

We study emergent, tunable topological properties in semiconductor quantum wells with high spin-orbit coupling, by using the interplay between quantum confinement and strain to induce electronic band inversion.

Epitaxial integration of superconductor and semiconductor materials

We are interested in the growth of single-crystal superconductors directly on semiconductor heterostructures. Using our expertise in the growth of high symmetry, high mobility electron gases, we are contributing to the search for Majorana bound states, a proposed building block for quantum computing.

Tensile-strained nanostructures and III-V/Si integration for infrared optoelectronics

Tensile strain lowers a semiconductor’s band gap energy. Harnessing this effect allows us to red-shift emission from tensile-strained quantum dots and create novel light sources that operate in the technologically relevant mid-IR wavelength range. We also use interfacial misfit arrays to manage strain at III-V/Si interfaces, enabling the integration of low-noise operating temperature IR detectors onto low-cost Si substrates.