Publications

* These papers later selected by Virtual Journal of Nanoscale Science and Technology.

2023

M.D. Nordstrom, T.A. Garrett, P. Reddy, J. McElearney, J.R. Rushing, K.D. Vallejo, K. Mukherjee, K.A. Grossklaus, T.E. Vandervelde, and P.J. Simmonds, "Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays", Crystal Growth & Design, 23, 8670 (2023).

J.A. Wenner, M. Frary, and P.J. Simmonds, "Supporting STEM graduate students in strengthening their professional identity through an authentic interdisciplinary partnership," Studies in Graduate and Postdoctoral Education, 15, 96 (2023).

K.D. Vallejo, C.I. Cabrera, T.A. Garrett, M. Drake, B. Liang, K.A. Grossklaus, and P.J. Simmonds, "Tunable mid-infrared interband emission from tensile-strained InGaAs quantum dots," ACS Nano, 17, 2318 (2023).

2022

K.D. Vallejo, F. Kabir, N. Poudel, C.A. Marianetti, D.H. Hurley, P.J. Simmonds, C.A. Dennett, and K. Gofryk, "Advances in actinide thin films: synthesis, properties, and future directions," Reports on Progress in Physics, 85, 123101 (2022).

M. Abramson, H.J. Coleman, P.J. Simmonds, T.P. Schulze, and C. Ratsch, "Kinetic Monte Carlo simulations of quantum dot self-assembly," Journal of Crystal Growth, 597, 126846 (2022).

P. Barnes, Y. Zuo, K. Dixon, D. Hou, S. Lee, Z. Ma, J. Connell, H. Zhou, C. Deng, K. Smith, E. Gabriel, Y. Liu, O.O. Maryon, P.H. Davis, H. Zhu, Y. Du, J. Qi, Z. Zhu, C. Chen, Z. Zhu, Y. Zhou, Paul J. Simmonds, A.E. Weltner, D. Schwartz, S.P. Ong, and H. Xiong, "Electrochemically-Induced Amorphous to Rock Salt Phase Transformation in Niobium Oxide Electrode for Li-Ion Batteries," Nature Materials, 21, 795 (2022). [Press]

C.A. Dennett, N. Poudel, P.J. Simmonds, A. Tiwari, D.H. Hurley, and K. Gofryk, "Towards actinide heterostructure synthesis and science," Nature Communications, 13, 2221 (2022).

A. Alzeidan, T.F. Cantalice, K.D. Vallejo, R.S.R. Gajjela, A.L. Hendriks, P.J. Simmonds, P.M. Koenraad, and A.A. Quivy, "Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors," Sensors and Actuators A: Physical, 334, 113357 (2022).

2021

K.D. Vallejo, T.A. Garrett, C.I. Cabrera, B. Liang, K.A. Grossklaus, and P.J. Simmonds, "Tensile-strained self-assembly of InGaAs on InAs(111)A," J. Vac. Sci. Technol. B, 39, 062809 (2021).

C.F. Schuck, R. Boutelle, K. Silverman, G. Moody, and P.J. Simmonds, "Single-Photon Generation from Self-Assembled GaAs/InAlAs(111)A Quantum Dots with Ultrasmall Fine-Structure Splitting," Journal of Physics: Photonics, 3, 024012 (2021).

K.E. Sautter, C.F. Schuck, J.C. Smith, K.D. Vallejo, T.A. Garrett, J. Soares, H.J. Coleman, M.M. Henry, E. Jankowski, C. Ratsch, and P.J. Simmonds, "Self-Assembly of Ge and GaAs Quantum Dots under Tensile Strain on InAlAs(111)A," Crystal Growth & Design, 21, 1674 (2021).

B.B. Haidet, L. Nordin, A. Muhowski, K.D. Vallejo, E.T. Hughes, J. Meyer, P.J. Simmonds, D. Wasserman, and K. Mukherjee, "Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A," Journal of Vacuum Science & Technology A, 39, 023404 (2021).

2020

C.F. Schuck, K.D. Vallejo, T.A. Garrett, Q. Yuan, Y. Wang, B. Liang, and P.J. Simmonds, "Impact of arsenic species on self-assembly of triangular and hexagonal tensile-strained GaAs(111)A quantum dots," Semiconductor Science & Technology, 35, 105001 (2020).

K.E. Sautter, K.D. Vallejo, and P.J. Simmonds, "Strain-driven quantum dot self-assembly by molecular beam epitaxy," Journal of Applied Physics, 128, 031101 (2020).

K.E. Sautter, C.F. Schuck, T.A. Garrett, A.E. Weltner, K.D. Vallejo, D. Ren, B. Liang, K.A. Grossklaus, T.E. Vandervelde, and P.J. Simmonds, "Self-assembly of tensile-strained Ge quantum dots on InAlAs(111)A," Journal of Crystal Growth, 533, 125468 (2020).

2019

C.F. Schuck, S.K. Roy, T.A. Garrett, Q. Yuan, Y. Wang, C.I. Cabrera, K.A. Grossklaus, T.E. Vandervelde, B. Liang, and P.J. Simmonds, "Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness," Scientific Reports, 9, 18179 (2019).

K.D. Vallejo, T.A. Garrett, K.E. Sautter, K. Saythavy, B. Liang, and P.J. Simmonds, "InAs(111)A homoepitaxy with molecular beam epitaxy," J. Vac. Sci. Technol. B, 37, 061810 (2019).

2018

A.I. Savva, K. Smith, M. Lawson, S.R. Croft, A.E. Weltner, C.D. Jones, H. Bull, P.J. Simmonds, L. Li and H.C. Xiong, "Defect Generation in TiO₂ Nanotube Anodes via Heat Treatment in Various Atmospheres for Lithium-Ion Batteries," Phys. Chem. Chem. Phys., 20, 22537 (2018).

C.F. Schuck, R.A. McCown, A. Hush, A. Mello, S. Roy, J.W. Spinuzzi, B. Liang, D.L. Huffaker, and P.J. Simmonds, "Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy," J. Vac. Sci. Technol. B, 36, 031803 (2018).

P.J. Simmonds, "Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly," Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 105430L (2018).

2017

J. A. Wenner, and P.J. Simmonds, "Two Departments, Two Models of Interdisciplinary Peer Learning," Journal of College Science Teaching, 47, 18 (2017).

B.-L. Liang, Y. Wang, S.-H. Zhang, Q.-L. Guo, S.-F. Wang, G.-S. Fu, P.J. Simmonds, Z.-Q. Wang "Optical image processing by using a photorefractive spatial soliton waveguide," Phys. Lett. A, 381, 1207 (2017).

C.D. Yerino, B. Liang, D.L. Huffaker, P.J. Simmonds, and M.L. Lee, "Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)," J. Vac. Sci. Technol. B, 35, 010801 (2017).

2016

T. Masuda, J. Faucher, P.J. Simmonds, K. Okumura, and M.L. Lee, "Device and material characteristics of GalnP solar cells grown on Ge substrates by molecular beam epitaxy," IEEE PVSC, 43, 2344 (2016).

S. Unsleber, M. Deppisch, C.M. Krammel, M. Vo, C.D. Yerino, P.J. Simmonds, M.L. Lee, P.M. Koenraad, C. Schneider, and S. Höfling, "Bulk AlInAs on InP(111) as a novel material system for pure single photon emission," Optics Express, 24, 23198 (2016).

Y.J. Chang, P.J. Simmonds, B. Beekley, M.S. Goorsky, and J.C.S. Woo, "Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy," Appl. Phys. Lett., 108, 163106 (2016).

2015

Z. Zhao, R.B. Laghumavarapu, P.J. Simmonds, H. Ji, B. Liang, and D.L. Huffaker, "Photoluminescence study of the effect of strain compensation on InAs/AlAsSb quantum dots," J. Cryst. Growth, 425, 312 (2015).

H.-M. Ji, B. Liang, P.J. Simmonds, B.-C. Juang, T. Yang, R.J. Young, and D.L. Huffaker, "Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence," Appl. Phys. Lett., 106, 103104 (2015).

B.-C. Juang, R.B. Laghumavarapu, B.J. Foggo, P.J. Simmonds, A. Lin, B. Liang, and D.L. Huffaker, "GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays," Appl. Phys. Lett., 106, 111101 (2015). [Press].

2014

C.D. Yerino, P.J. Simmonds, B. Liang, D. Jung, C. Schneider, S. Unsleber, M. Vo, D.L. Huffaker, S. Höfling, M. Kamp, and M.L. Lee, "Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting," Appl. Phys. Lett., 105, 251901 (2014).

P.J. Simmonds, M. Sun, R.B. Laghumavarapu, B. Liang, A.G. Norman, J.-W. Luo, and D.L. Huffaker, "Improved quantum dot stacking for intermediate band solar cells using strain compensation," Nanotechnology, 25, 445402 (2014). [Press].

Q.L. Guo, B.L. Liang, Y. Wang, G.Y. Deng, Y.H. Jiang, S.H. Zhang, G.S. Fu, and P.J. Simmonds, "Propagation characteristics of a focused laser beam in a strontium barium niobate photorefractive crystal under reverse external electric field," Appl. Optics, 53, 6422 (2014).

C.D. Yerino, P.J. Simmonds, B. Liang, V.G. Dorogan, M.E. Ware, Y.I. Mazur, D. Jung, D.L. Huffaker, G.J. Salamo, and M.L. Lee, "Tensile GaAs(111) quantum dashes with tunable luminescence below the bulk bandgap," Appl. Phys. Lett., 105, 071912 (2014).

R.B. Laghumavarapu, M. Sun, P.J. Simmonds, B. Liang, S. Hellstroem, Z. Bittner, S. Polly, S. Hubbard, A.G. Norman, J.-W. Luo, R. Welser, A.K. Sood, and D.L. Huffaker, "New quantum dot nanomaterials to boost solar energy harvesting," SPIE Newsroom. Online: January 24, (2014).

2013

P.J. Simmonds, C.D. Yerino, M. Sun, B. Liang, D.L. Huffaker, V.G. Dorogan, Y.I. Mazur, G.J. Salamo, and M.L. Lee, "Tuning quantum dot luminescence below the bulk bandgap using tensile strain," ACS Nano, 7, 5017-5023 (2013).

M. Sun, P.J. Simmonds, R.B. Laghumavarapu, A. Lin, C.J. Reyner, H.-S. Duan, B. Liang, and D.L. Huffaker, "Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots," Appl. Phys. Lett., 102, 023107 (2013). [Press].

2012

P.J. Simmonds and M.L. Lee, "Tensile-strained growth on low-index GaAs," J. Appl. Phys., 112, 054313 (2012).

P.J. Simmonds, R.B. Laghumavarapu, M. Sun, A. Lin, C.J. Reyner, B. Liang, and D.L. Huffaker, "Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers," Appl. Phys. Lett., 100, 243108 (2012).

2011

P.J. Simmonds and M.L. Lee, "Self-assembly on (111)-oriented III-V surfaces," Appl. Phys. Lett., 99, 123111 (2011). *

S. Tomasulo, J. Simon, P.J. Simmonds, J. Biagiotti and M.L. Lee, "Molecular beam epitaxy of metamorphic In_yGa_1-yP solar cells on mixed anion GaAs_xP_1-x/GaAs graded buffers," J. Vac. Sci. Technol. B, 29, 03C118 (2011).

J. Simon, P.J. Simmonds, J.M. Woodall and M.L. Lee, "Graphitized carbon on GaAs(100) substrates," Appl. Phys. Lett., 98, 073113 (2011).

P.J. Simmonds, J. Simon, J.M. Woodall and M.L. Lee, "Molecular beam epitaxy approach to the graphitization of GaAs(001) surfaces," J. Vac. Sci. Technol. B, 29, 03C103 (2011). [Press: paper featured in "Beneath the AVS surface", April 2011].

J. Simon, S. Tomasulo, P.J. Simmonds, M. Romero and M.L. Lee, "Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells," J. Appl. Phys., 109, 013708 (2011).

2010

Y. Song, P.J. Simmonds and M.L. Lee, "Self-assembled In_0.5Ga_0.5As quantum dots on GaP(001)," Appl. Phys. Lett., 97, 223110 (2010). *

P.J. Simmonds and M.L. Lee, "Tensile strained island growth at step-edges on GaAs(110)," Appl. Phys. Lett., 97, 153101 (2010).

M.L. Lee and P.J. Simmonds, "Tensile strained III-V self-assembled nanostructures on a (110) surface," Proc. SPIE: Nanoepitaxy, 7768, 776805 (2010).

J. Simon, S. Tomasulo, P.J. Simmonds, M. Romero and M.L. Lee, "Growth of metamorphic InGaP for wide-bandgap photovoltaic junctions by MBE," MRS Symp. Proc., 1268, EE06-04 (2010).

2009

P.J. Simmonds, S.N. Holmes, H.E. Beere, I. Farrer, F. Sfigakis, D.A. Ritchie and M. Pepper, "Molecular beam epitaxy of high mobility In_0.75Ga₀₂₅As for electron spin transport applications," J. Vac. Sci. Technol. B, 27, 2066 (2009).

2008

M.J.W. Rodwell, M. Wistey, U. Singisetti, G. Burek, A. Gossard, S. Stemmer, R. Engel-Herbert, Y. Hwang, Y. Zheng, C. Van de Walle, C. Palmstrøm, E. Arkun, P.J. Simmonds, P. Asbeck, Y. Taur, A. Kummel, B. Yu, D. Wang, Y. Yuan, P. McIntyre, J. Harris, M.V. Fischetti and C. Sachs, "Technology development & design for 22 nm InGaAs/InP-channel MOSFETs," IEEE IPRM, 620 (2008).

S.N. Holmes, P.J. Simmonds, H.E. Beere, F. Sfigakis, I. Farrer, D.A. Ritchie and M. Pepper, "Bychkov-Rashba dominated band structure in an In_0.75Ga_0.25As - In_0.75Al_0.25As device with spin-split carrier densities < 10¹¹ cm^-2," J. Phys.: Condens. Matter, 20, 472207 (2008).

P.J. Simmonds, S.N. Holmes, H.E. Beere and D.A. Ritchie, "Spin-orbit coupling in an In_0.52Ga_0.48As quantum well with two populated subbands," J. Appl. Phys., 103, 124506 (2008). *

P.J. Simmonds, F. Sfigakis, H.E. Beere, D.A. Ritchie, M. Pepper, D. Anderson and G.A. Jones, "Quantum transport in In_0.75Ga_0.25As quantum wires," Appl. Phys. Lett., 92, 152108 (2008). *

2007

P.J. Simmonds, H.E. Beere, S.N. Holmes and D.A. Ritchie, "Growth-temperature optimization for low carrier-density In_0.75Ga_0.25As-based HEMTs on InP," J. Appl. Phys., 102, 083518 (2007).

H.W. Li, B.E. Kardynał, P. See, A.J. Shields, P.J. Simmonds, H.E. Beere and D.A. Ritchie, "Quantum dot resonant tunneling diode for telecom wavelength single photon detection," Appl. Phys. Lett., 91, 073516 (2007). *

P.J. Simmonds, H.E. Beere, H.W. Li, P. See, A.J. Shields and D.A. Ritchie, "Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP," J. Vac. Sci. Technol. B, 25, 1044 (2007). *

H.W. Li, P.J. Simmonds, H.E. Beere, B.E. Kardynał, D.A. Ritchie and A.J. Shields, "Quantum dot resonant tunneling diodes for telecom wavelength single photon detection," Proc. SPIE, 67660N (2007).

2006

H.W. Li, P.J. Simmonds, H.E. Beere, B.E. Kardynał, P. See, D.A. Ritchie and A.J. Shields, "Optimization of quantum dot resonant tunneling diodes for fiber wavelength detection," phys. stat. sol. (c), 3, 4035 (2006).