Research/Areas of Interest:
Quantum Information, Computation and Communication
Electronic Nanomaterials
Quantum Photonics
Semiconductor Optoelectronics
Electronic Nanomaterials
Quantum Photonics
Semiconductor Optoelectronics
Education
- Doctor of Philosophy, Univ of Cambridge, GBR, 2008
- Master of Science, Univ of Essex, GBR, 2002
- Bachelor of Science, Univ of Durham/England, GBR, 1999
Biography
Dr. Paul Simmonds completed his Ph.D. in semiconductor physics at the University of Cambridge in 2008, followed by postdoctoral positions at the University of Minnesota, UCSB, and Yale University. Starting in 2011, he managed the Integrated NanoMaterials Laboratory at UCLA, and Chaired the IEEE Photonics Society chapter. Dr. Simmonds joined Boise State University in 2014, with joint appointments in Physics and Materials Science & Engineering, and was promoted to Associate Professor in 2020. He also holds a joint appointment at Idaho National Laboratory. He is a Senior Member of the IEEE, winner of the 2018 North American Molecular Beam Epitaxy Young Investigator award, and a National Science Foundation CAREER awardee. He will join the Department of Electrical and Computer Engineering as a Visiting Associate Professor (tenure-track) in August 2023.
His research lies at the convergence between electrical engineering, condensed matter physics, and materials science. A key tool in his work is molecular beam epitaxy (MBE), an advanced technique for growing ultrapure semiconductor crystals with atomic-level control over nanomaterial size. Specific research interests include the synthesis of novel semiconductor nanostructures, spintronics, high mobility electron transport, and the integration of dissimilar materials. His work has applications in a wide range of areas from quantum information science and advanced infrared optoelectronic devices, to low-power electronics.
His research lies at the convergence between electrical engineering, condensed matter physics, and materials science. A key tool in his work is molecular beam epitaxy (MBE), an advanced technique for growing ultrapure semiconductor crystals with atomic-level control over nanomaterial size. Specific research interests include the synthesis of novel semiconductor nanostructures, spintronics, high mobility electron transport, and the integration of dissimilar materials. His work has applications in a wide range of areas from quantum information science and advanced infrared optoelectronic devices, to low-power electronics.